MMSTA55 [BL Galaxy Electrical]

PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
MMSTA55
型号: MMSTA55
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

PNP Silicon Epitaxial Planar Transistor
PNP硅外延平面晶体管

晶体 晶体管
文件: 总3页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BL Galaxy Electrical  
Production specification  
PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56  
FEATURES  
Pb  
Lead-free  
z
z
z
Power dissipation.(PC=200mW).  
Epitaxial planar die construction.  
Also available in lead free version.  
APPLICATIONS  
z
General purpose application and switching application.  
SOT-323  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
MMSTA55  
MMSTA56  
K2H  
K2G  
SOT-323  
SOT-323  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
MMSTA55  
MMSTA56  
-60  
-80  
VCBO  
VCEO  
VEBO  
IC  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
MMSTA55  
MMSTA56  
MMSTA55  
MMSTA56  
-60  
-80  
V
-4  
V
Collector Current -Continuous  
Collector Dissipation  
-500  
200  
mA  
mW  
PC  
Tj,Tstg  
Junction and Storage Temperature  
-55~150  
Document number: BL/SSSTF063  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Parameter  
Symbol Test conditions  
MIN TYP MAX  
UNIT  
IC=-100μA,IE=0 MMSTA55 -60  
Collector-base breakdown voltage V(BR)CBO  
V
MMSTA56 -80  
Collector-emitter breakdown  
IC=-1mA,IB=0 MMSTA55 -60  
MMSTA56 -80  
V(BR)CEO  
V
V
voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)EBO  
IE=-100μA,IC=0  
-4  
VCB=-60V,IE=0 MMSTA55  
VCB=-80V,IE=0 MMSTA56  
-0.1  
-0.1  
ICBO  
μA  
μA  
VCE=-50V,IB=0 MMSTA55  
VCE=-60V,IB=0 MMSTA56  
-0.1  
-0.1  
Collector cut-off current  
DC current gain  
ICEO  
VCE=-1V,IC=-10mA  
VCE=-1V,IC=-100mA  
100  
100  
hFE  
Collector-emitter saturation  
voltage  
VCE(sat)  
IC=-100mA, IB=-10mA  
VCE=-1V, IC=-100mA  
-0.25  
-1.2  
V
V
Base-emitter on voltage  
Transition frequency  
VBE(on)  
VCE=-1V,IC= -100mA,  
f=100MHz  
fT  
50  
MHz  
Document number: BL/SSSTF063  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-323  
SOT-323  
Min  
Dim  
A
Max  
2.2  
1.8  
B
1.15  
1.35  
C
D
E
1.0Typical  
0.15  
0.25  
1.2  
0.35  
0.40  
1.4  
G
H
J
0.02  
0.1  
0.1Typical  
K
2.1  
2.3  
All Dimensions in mm  
PACKAGE INFORMATION  
Device  
Package  
Shipping  
MMSTA55/MMSTA56  
SOT-323  
3000/Tape&Reel  
Document number: BL/SSSTF063  
Rev.A  
www.galaxycn.com  
3

相关型号:

MMSTA55-13

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES

MMSTA55-7-F

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMSTA55_1

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMSTA55_2

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMSTA56

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMSTA56

PNP General Purpose Transistor
ROHM

MMSTA56

PNP Silicon Epitaxial Planar Transistor
BL Galaxy Ele

MMSTA56

TRANSISTOR(PNP)
HTSEMI

MMSTA56-13

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES

MMSTA56-7

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES

MMSTA56-7-F

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMSTA56T146

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN
ROHM